Nanoscale Transistors: Device Physics, Modeling and Simulation Paperback - 2010
by Mark Lundstrom; Jing Guo
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From the rear cover
NANOSCALE TRANSISTORS: Device Physics, Modeling and Simulation describes the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working with nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. Chapter 1 reviews some basic concepts, and Chapter 2 summarizes the essentials of traditional semiconductor devices, digital circuits, and systems. This material provides a baseline against which new devices can be assessed. Chapters 3 and 4 present a non-traditional view of the MOSFET using concepts that are valid at nanoscale. Chapter 5 applies the same concepts to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. Chapter 6 explores the limits of devices by discussing conduction in single molecules.
The book is a useful reference for senior-level or graduate-level courses on nanoelectronics, modeling and simulation. It is also valuable to scientists and engineers who are pushing MOSFETs to their limits and developing revolutionary nanoscale devices.
Details
- Title Nanoscale Transistors: Device Physics, Modeling and Simulation
- Author Mark Lundstrom; Jing Guo
- Binding Paperback
- Edition Softcover reprin
- Pages 218
- Volumes 1
- Language ENG
- Publisher Springer
- Date 2010-10-29
- ISBN 9781441939159 / 1441939156
- Weight 0.72 lbs (0.33 kg)
- Dimensions 9.21 x 6.14 x 0.48 in (23.39 x 15.60 x 1.22 cm)
- Dewey Decimal Code 621.381
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